JPS59155169A - Ｉｇｆｅｔ／絶縁ゲート・トリガー・サイリスタ混成電力スイッチング半導体デバイス - Google Patents

Ｉｇｆｅｔ／絶縁ゲート・トリガー・サイリスタ混成電力スイッチング半導体デバイス

Info

Publication number
JPS59155169A
JPS59155169A JP59017269A JP1726984A JPS59155169A JP S59155169 A JPS59155169 A JP S59155169A JP 59017269 A JP59017269 A JP 59017269A JP 1726984 A JP1726984 A JP 1726984A JP S59155169 A JPS59155169 A JP S59155169A
Authority
JP
Japan
Prior art keywords
region
base
thyristor
insulated gate
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59017269A
Other languages
English (en)
Japanese (ja)
Other versions
JPH043113B2 (en]
Inventor
バントバル・ジャイアント・バリガ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS59155169A publication Critical patent/JPS59155169A/ja
Publication of JPH043113B2 publication Critical patent/JPH043113B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristors (AREA)
JP59017269A 1983-02-04 1984-02-03 Ｉｇｆｅｔ／絶縁ゲート・トリガー・サイリスタ混成電力スイッチング半導体デバイス Granted JPS59155169A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US46416183A 1983-02-04 1983-02-04
US464161 1983-02-04

Publications (2)

Publication Number Publication Date
JPS59155169A true JPS59155169A (ja) 1984-09-04
JPH043113B2 JPH043113B2 (en]) 1992-01-22

Family

ID=23842796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59017269A Granted JPS59155169A (ja) 1983-02-04 1984-02-03 Ｉｇｆｅｔ／絶縁ゲート・トリガー・サイリスタ混成電力スイッチング半導体デバイス

Country Status (3)

Country Link
EP (1) EP0118007B1 (en])
JP (1) JPS59155169A (en])
DE (1) DE3482354D1 (en])

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63288064A (ja) * 1987-05-20 1988-11-25 Toshiba Corp 複合サイリスタ
JPH07292984A (ja) * 1994-04-22 1995-11-07 Haga Kensetsu:Kk 鉄筋型枠受台

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4618872A (en) * 1983-12-05 1986-10-21 General Electric Company Integrated power switching semiconductor devices including IGT and MOSFET structures
JPH0680832B2 (ja) * 1987-09-30 1994-10-12 日本電気株式会社 半導体装置
ATE93654T1 (de) * 1988-04-22 1993-09-15 Asea Brown Boveri Abschaltbares leistungshalbleiterbauelement.
DE69032084T2 (de) * 1989-11-17 1998-07-16 Toshiba Kawasaki Kk Halbleiteranordnung mit zusammengesetzter Bipolar-MOS-Elementpille, geeignet für eine Druckkontaktstruktur
JPH0831606B2 (ja) * 1989-11-17 1996-03-27 株式会社東芝 大電力用半導体装置
DE4127033A1 (de) * 1991-08-16 1993-02-18 Asea Brown Boveri Mos-gesteuerter thyristor mct
CN104393034B (zh) * 2014-11-25 2017-11-14 电子科技大学 一种mos栅控晶闸管的制造方法
US10411694B2 (en) 2016-07-22 2019-09-10 Abb Schweiz Ag Solid state switch system
US10554201B2 (en) 2016-07-22 2020-02-04 Abb Schweiz Ag Solid state switch system
CN107527951B (zh) * 2017-09-19 2019-11-01 电子科技大学 一种具有高输入电容的阴极短路栅控晶闸管
US11469757B2 (en) 2020-10-16 2022-10-11 Abb Schweiz Ag Solid-state power switch
US11641103B2 (en) 2020-11-06 2023-05-02 Abb Schweiz Ag Power semiconductor switch clamping circuit
US11955900B2 (en) 2021-06-30 2024-04-09 Abb Schweiz Ag Soft turn-off for motor controllers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57120369A (en) * 1980-12-02 1982-07-27 Gen Electric Gate enhanced rectifier

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2904424C2 (de) * 1979-02-06 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit Steuerung durch Feldeffekttransistor
DE3024015A1 (de) * 1980-06-26 1982-01-07 Siemens AG, 1000 Berlin und 8000 München Steuerbarer halbleiterschalter
FR2488046A1 (fr) * 1980-07-31 1982-02-05 Silicium Semiconducteur Ssc Dispositif de puissance a commande par transistor dmos

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57120369A (en) * 1980-12-02 1982-07-27 Gen Electric Gate enhanced rectifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63288064A (ja) * 1987-05-20 1988-11-25 Toshiba Corp 複合サイリスタ
JPH07292984A (ja) * 1994-04-22 1995-11-07 Haga Kensetsu:Kk 鉄筋型枠受台

Also Published As

Publication number Publication date
EP0118007A2 (en) 1984-09-12
JPH043113B2 (en]) 1992-01-22
EP0118007A3 (en) 1986-06-25
EP0118007B1 (en) 1990-05-23
DE3482354D1 (de) 1990-06-28

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